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ON Semiconductor )
Darlington Silicon Power Transistors
. . . designed for general-purpose amplifier and low speed switching applications.
2N6667 2N6668
PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60-80 VOLTS 65 WATTS
* High DC Current Gain -- * * * * *
hFE = 3500 (Typ) @ IC = 4 Adc Collector-Emitter Sustaining Voltage -- @ 200 mAdc VCEO(sus) = 60 Vdc (Min) -- 2N6667 = 80 Vdc (Min) -- 2N6668 Low Collector-Emitter Saturation Voltage -- VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB Compact Package Complementary to 2N6387, 2N6388
COLLECTOR
4
1
2
STYLE 1: PIN 1. 2. 3. 4.
BASE COLLECTOR EMITTER COLLECTOR
3 CASE 221A-09 TO-220AB
BASE [8k [ 120
EMITTER
Figure 1. Darlington Schematic
II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I I I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS (1)
Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 80 80 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 5 Collector Current -- Continuous -- Peak Base Current 10 15 250 mAdc watts W/_C Total Device Dissipation @ TC = 25_C Derate above 25_C Total Device Dissipation @ TA = 25_C Derate above 25_C PD PD 65 0.52 2 0.016 Watts W/_C _C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +150 (1) Indicates JEDEC Registered Data.
(c) Semiconductor Components Industries, LLC, 2002
1
April, 2002 - Rev. 4
Publication Order Number: 2N6667/D
2N6667 2N6668
III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
THERMAL CHARACTERISTICS
Characteristic Symbol RJC RJA Max Unit Thermal Resistance, Junction to Case 1.92 62.5 _C/W _C/W Thermal Resistance, Junction to Ambient
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector-Emitter Sustaining Voltage (2) (IC = 200 mAdc, IB = 0)
2N6667 2N6668
VCEO(sus) ICEO
60 80 -- -- -- -- -- -- --
-- -- 1 1
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0)
2N6667 2N6668
mAdc
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
2N6667 2N6668 2N6667 2N6668
ICEX
300 300 3 3 5
Adc
mAdc
IEBO hFE
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 5 Adc, VCE = 3 Vdc) (IC = 10 Adc, VCE = 3 Vdc)
1000 100 -- -- -- --
20000 -- 2 3
--
Collector-Emitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc) Base-Emitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc) (IC = 10 Adc, IB = 0.1 Adc)
VCE(sat) VBE(sat)
Vdc Vdc
2.8 4.5
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
|hfe| Cob hfe
20 --
-- --
-- --
200
pF
Small-Signal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz) *Indicates JEDEC Registered Data (2) Pulse Test: Pulse Width v 300 s, Duty Cycle v 2%.
1000
VCC - 30 V
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES e.g., 1N5825 USED ABOVE IB [ 100 mA MSD6100 USED BELOW IB [ 100 mA FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf v 10 ns DUTY CYCLE = 1.0%
RC V2 APPROX +8V 0 V1 APPROX - 12 V 25 s RB 51 D1 + 4.0 V [8k TUT
SCOPE
[ 120
Figure 2. Switching Times Test Circuit
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2N6667 2N6668
TA TC 4 80 PD, POWER DISSIPATION (WATTS) 10 7 5 3 t, TIME ( s) TC 2 40 TA 2 1 0.7 0.5 0.3 0.2 0 0 20 40 60 80 100 T, TEMPERATURE (C) 120 140 160 0.1 0.1 0.2 tf tr ts
3
60
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C
1
20
.td
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Power Derating
Figure 4. Typical Switching Times
1 r(t) NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.5 0.3 0.2 0.1 0.2 0.1 0.05 0.02 0.01 0.02 0.05 SINGLE PULSE 0.1 0.2 0.5 1 2 5 t, TIME (ms) t1 t2 P(pk) ZJC(t) = r(t) RJC RJC = 1.92C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 50 100 200 500 1000
0.05 0.03 0.02 0.01 0.01
DUTY CYCLE, D = t1/t2 10 20
Figure 5. Thermal Response
20 IC, COLLECTOR CURRENT (AMPS) 10 5 3 2 1 TJ = 150C 2N6667 BONDING WIRE LIMIT 2N6668 THERMAL LIMIT @ TC = 25C SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO dc 1 ms 5 ms 100 s
0.5 0.3 0.2 0.1
0.05 0.03 0.02
1
Figure 6. Maximum Safe Operating Area
5 2 3 7 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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2N6667 2N6668
10,000 hFE , SMALL-SIGNAL CURENT GAIN 5000 2000 C, CAPACITANCE (pF) 1000 500 200 100 50 20 10 1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000 TC = 25C VCE = 4 VOLTS IC = 3 AMPS 200 TJ = 25C 300
100 70 50 30 0.1
Cib
Cob
0.2
f, FREQUENCY (kHz)
1 2 5 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 7. Typical Small-Signal Current Gain
Figure 8. Typical Capacitance
10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 1000 700 500 300 200 0.1
VCE = 3 V TJ = 150C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
20,000
2.6 TJ = 25C 2.2 IC = 2 A 1.8 1.4 1 0.6 0.3 4A 6A
TJ = 25C
TJ = - 55C 0.2 3 0.3 0.5 0.7 1 2 IC, COLLECTOR CURRENT (AMPS) 5 7 10
0.5 0.7
1
2 3 57 IB, BASE CURRENT (mA)
10
20
30
Figure 9. Typical DC Current Gain
Figure 10. Typical Collector Saturation Region
V, TEMPERATURE COEFFICIENTS (mV/C)
3 2.5 2 1.5 1 0.5 0.1 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3 V VCE(sat) @ IC/IB = 250 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMPS) 5 7 10 TJ = 25C
+5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 VC for VCE(sat) VB for VBE 0.2 0.3 25C to 150C -55C to 25C 0.5 0.7 1 2 3 5 7 10 *IC/IB hFE @ VCE + 3.0 V 3 25C to 150C -55C to 25C
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical "On" Voltages
Figure 12. Typical Temperature Coefficients
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2N6667 2N6668
105 104 IC, COLLECTOR CURRENT ( A) 103 102 101 100 TJ = 150C 100C 25C +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 VBE, BASE-EMITTER VOLTAGE (VOLTS) -1.2 -1.4 REVERSE FORWARD
VCE = 30 V
10-1 +0.6
Figure 13. Typical Collector Cut-Off Region
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2N6667 2N6668
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AA
-T- B
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
F T S
C
Q
123
A U K
H Z L V G D N
STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR
R J
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2N6667 2N6668
Notes
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2N6667 2N6668
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PUBLICATION ORDERING INFORMATION
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2N6667/D

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